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PTF 10052 35 Watts, 1.0 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * Performance at 960 MHz, 28 Volts - Output Power = 35 Watts - Power Gain = 13.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability Available in Package 20222 as PTF 10007
* * * * *
Typical Output Power & Efficiency vs. Input Power
50 40 Output Pow er (W) Ef ficiency (%) 100 80 60 40 20 0 0 1 2 3
Package 20235
Efficiency
B-1
234
100 52 56
991
Output Power
6
30 20 10 0
VDD = 28 V IDQ = 300 m A f = 960 MHz
A-12
1000
3456
9725
7
Package 20222
Input Power (Watts)
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 300 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 35 W, IDQ = 300 mA, f = 960 MHz-- all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps P-1dB h Y
Min
12.0 35 50 --
Typ
13.5 -- 55 --
Max
-- -- -- 10:1
Units
dB Watts % --
e
1
PTF 10052
Electrical Characteristics
Characteristic
(100% Tested)
e
Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
70 -- -- 2.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
60 20 200 120 0.7 -40 to +150 1.4
Unit
Vdc Vdc C Watts W/C C C/W
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
Output Power & Efficiency
30 25 20 Efficiency (%) 70 60 50
Gain (dB)
Broadband Test Fixture Performance
20 Efficiency (%) 16 50 Gain 12
Gain (dB)
Gain
VDD = 28 V IDQ = 300 mA POUT = 35 W
40 -30 5 20 -15
15 10 5
VDD = 28 V IDQ = 300 mA
500 600 700
Output Pow er (W) 30 20 1000
8
0 400
800
900
4 925
930
935
940
Return Loss (dB) 10 -25 0 945 950 955 960 -35
Frequency (MHz)
Frequency (MHz)
2
Return Loss
40
Efficiency
60
e
Typical Performance
Power Gain vs. Output Power
17 16 15 14 13 12 11 0.1 1.0 10.0 100.0
-10 -20
PTF 10052
Intermodulation Distortion vs. Output Power
VDD = 28 V IDQ = 300 m A f1 = 960.000 MHz f2 = 960.100 MHz
3rd
Power Gain (dB)
IDQ = 300 mA
IMD (dBc)
-30 -40 -50 -60 0
IDQ = 150 mA IDQ = 75 mA
VDD = 28 V f = 960 MHz
5th 7th
10
20
30
40
50
Output Power (Watts)
Output Power (Watts-PEP)
Output Power vs. Supply Voltage
45 120
Capacitance vs. Supply Voltage
40 100 80 60 40 20 0
Output Power (Watts)
Cds and Cgs (pF)
25 20
35
Cds Crss
0 10 20 30 40
15 10 5 0
30 22 24 26 28 30 32 34
Supply Voltage (Volts)
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 Temp. (C) 80 130 Voltage normalized to 1.0 V Series show current (A)
0.3 0.87 1.44 2.01 2.58 3.15
3
Crss (pF)
40
IDQ = 300 mA POUT = 5 W f = 960 MHz
Cgs
VGS =0 V f = 1 MHz
35 30
PTF 10052
Impedance Data (shown for fixed-tuned broadband circuit)
VDD = 28 V, POUT = 35 W, IDQ = 300 mA
D
e
Z0 = 50 W
Z Source
Z Load
G S
Frequency
MHz 850 900 950 1000 R
Z Source W
jX -2.80 -1.65 -0.30 0.88 R 1.48 1.45 1.35 1.10
Z Load W
jX 1.55 2.30 3.40 4.15 2.60 2.60 2.68 2.70
4
e
Typical Scattering Parameters
(VDS = 28 V, ID = 2.0 A)
PTF 10052
f (MHz)
400 420 440 460 480 500 520 540 560 580 600 620 640 660 680 700 720 740 760 780 800 820 840 860 880 900 920 940 960 980 1000
S11 Mag
0.948 0.951 0.955 0.956 0.957 0.959 0.960 0.962 0.963 0.964 0.964 0.965 0.967 0.966 0.967 0.967 0.968 0.968 0.967 0.966 0.967 0.968 0.967 0.967 0.967 0.966 0.966 0.966 0.966 0.966 0.965
S21 Ang
-167 -168 -168 -168 -168 -168 -169 -169 -169 -169 -169 -169 -169 -170 -170 -170 -170 -170 -170 -170 -170 -170 -170 -170 -170 -170 -171 -171 -171 -171 -171
S12 Ang
33 32 30 29 28 27 26 25 24 22 22 21 21 20 19 18 18 17 17 17 16 16 15 15 14 14 14 14 13 13 12
S22 Ang
-37 -37 -37 -36 -38 -35 -34 -30 -29 -28 -23 -20 -13 -6 3 8 21 25 33 44 51 55 59 67 68 73 75 79 81 83 86
Mag
3.668 3.403 3.161 2.943 2.745 2.575 2.421 2.282 2.151 2.024 1.907 1.806 1.72 1.636 1.558 1.483 1.413 1.345 1.281 1.228 1.179 1.134 1.088 1.039 0.993 0.957 0.922 0.890 0.859 0.827 0.794
Mag
0.006 0.005 0.005 0.005 0.004 0.004 0.004 0.004 0.003 0.003 0.003 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.002 0.003 0.003 0.003 0.003 0.003 0.004 0.004 0.004
Mag
0.858 0.866 0.877 0.886 0.892 0.898 0.903 0.907 0.911 0.913 0.919 0.925 0.929 0.929 0.929 0.928 0.930 0.932 0.935 0.937 0.938 0.939 0.938 0.938 0.938 0.941 0.943 0.941 0.942 0.943 0.942
Ang
-149 -150 -151 -152 -152 -153 -153 -154 -155 -155 -156 -156 -156 -157 -157 -157 -158 -158 -159 -159 -159 -159 -160 -160 -160 -161 -161 -161 -161 -161 -162
Test Circuit
Parts Layout (not to scale)
5
PTF 10052
e
Test Circuit Schematic for f = 960 MHz
DUT C1, C5 C2 C3 C4 C6, C8 C7, C9 C10 L1 R1 R2 PTF 10052 39 pF, Capacitor ATC 100 B 7.5 pF, Capacitor ATC 100 B 0.6-6.0 pF, Trimmer Capacitor, Johanson, 5701-PC 0.35-3.5 pF, Trimmer Capacitor, Johanson, 5801-PC 51 pF, Capacitor ATC 100 B 0.1 mF, 50 V, Capacitor, Digi-Key P4917-ND 100 mF, 50 V, Electrolytic Capacitor, Digi-Key P5276 4 Turn, #20 AWG, .120" I.D. 1 K, 1/4 W Resistor 10 K, 1/4 W Resistor Microstrip 50 W 0.185 l 960 MHz Microstrip 5.70 W 0.240 l 960 MHz Microstrip 9.30 W .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper
l1, l4 l2 l3
Circuit Board
Artwork (1 inch
)
Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. LP (c) 1998 Ericsson Inc. EUS/KR 1301-PTF 10052 Uen Rev. A 01-10-2000
6

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